Are insulated-gate bipolar transistors a good choice for solar inverter applications?

For solar inverter applications, it is well known that insulated-gate bipolar transistors (IGBTs) ofer benefits compared to other types of power devices, like high-current-carrying capability, gate control using voltage instead of current and the ability to match the co-pack diode with the IGBT.

How do IGBTs work in a PV inverter?

During operation inside a PV inverter, IGBTs are subject to AC stress conditions as opposed to DC stress conditions. This typically consists of a 60 Hz on-off cycle, with a Pulse-Width-Modulated (PWM) signal on the order of 10 – 15 kHz superimposed on the lower-frequency cycle.

Can a 600V 60A silicon IGBT be used in residential inverters?

A commercially available 600V, 60A, silicon IGBT found in common residential inverters was evaluated under normal and extreme operating conditions with DC and pulsed biasing schemes.

Can IGBT degradation cause a failure of an inverter?

This IGBT degradation would most likely not cause the failure of an inverter, but could degrade performance. Furthermore, it is highly questionable if a device exhibiting significant instability would operate for the expected lifetime of an inverter (i.e. 5 to 20 years).

Which EF-ficiency is possible for a solar inverter design?

The latest 600-V trench IGBT is optimized for switch-ing at 20 kHz. It can be seen that this IGBT has lower total power dissipation compared to the previous-generation planar IGBT (Fig. 4). We can conclude that the highest ef-ficiency possible for a solar inverter design, a trench-gate

Which IGBT has the lowest power dissipation?

Ultrafast IGBTs switching at 20 kHz provide the lowest power-dissipation levels compared to fast and standard-speed devices. And of the two ultrafast types shown on the right, a trench-gate IGBT dissipates the least amount of power. IGBT, is the device of choice for the high-side IGBTs. The same question arises for the low-side IGBTs.